? 2004 ixys all rights reserved 1 - 2 428 dss 17-06cr ixys reserves the right to change limits, test conditions and dimensions. i fav = 17 a v rrm = 600 v t rr = 45 ns v rsm v rrm type v v 600 600 dss 17-06cr hiperdyn tm schottky diode (electrically isolated back surface) pulse test: pulse width = 5 ms, duty cycle < 2.0 % pulse width = 300 s, duty cycle < 2.0 % data according to iec 60747 and per diode unless otherwise specified. features ? silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation low cathode to tab capacitance (< 25 pf) international standard package planar passivated chips very short recovery time extremely low switching losses low i rm -values soft recovery behaviour epoxy meets ul 94v-0 isolated and ul registered e153432 applications antiparallel diode for high frequency switching devices antisaturation diode snubber diode free wheeling diode in converters and motor control circuits rectifiers in switch mode power supplies (smps) inductive heating uninterruptible power supplies (ups) ultrasonic cleaners and welders advantages avalanche voltage rated for reliable operation soft reverse recovery for low emi/rfi low i rm reduces: - power dissipation within the diode - turn-on loss in the commutating switch dimensions see outlines.pdf symbol conditions maximum ratings i frms 50 a i favm t c = 95c; rectangular, d = 0.5 17 a i frm t p < 10 s; rep. rating, pulse width limited by t vjm tbd a i fsm t vj = 45c; t p = 10 ms (50 hz), sine 200 a e as i as = 2 a; l = 100 h; t vj = 25c; non-repetitive 0.2 mj i ar v a = 1.5 v r typ.; f = 10 khz; repetitive 0.2 a t vj -55...+175 c t vjm 175 c t stg -55...+150 c p tot t c = 25c 105 w v isol 50/60 hz rms; i isol 1 ma 2500 v~ f c mounting force w ith clip 20...120 n weight typical 6 g symbol conditions characteristic values typ. max. i r t vj = 25c v r = v rrm 0.5 ma t vj = 125c v r = v rrm 5ma v f i f = 15 a; t vj = 125c 2.71 v t vj = 25c 3.32 v r thjc 1.4 k/w r thch 0.25 k/w t rr i f = 10 a; -di/dt = 100 a/s; 45 ns v r = 100 v; t vj = 25c i rm v r = 100 v; i f = 10 a; -di f /dt = 100 a/s 4.0 a t vj = 25c a = anode, c = cathode * patent pending isoplus 247 tm a c isolated back surface * c a
? 2004 ixys all rights reserved 2 - 2 428 dss 17-06cr ixys reserves the right to change limits, test conditions and dimensions. fig. 3 typ. junction capacitance c t versus reverse voltage v r fig. 2 typ. value of reverse current i r versus reverse voltage v r fig. 1 maximum forward voltage drop characteristics fig. 4 average forward current i f(av) versus case temperature t c fig. 5 forward power loss characteristics fig. 6 transient thermal impedance junction to case at various duty cycles note: all curves are per diode 012345 1 10 100 0 200 400 600 0.0001 0.001 0.01 0.1 1 10 51525 01020 0 10 20 30 40 50 60 70 0.0001 0.001 0.01 0.1 1 10 0.01 0.1 1 0 40 80 120 160 0 5 10 15 20 25 30 i f(av) t c c i f(av) t s k/w i fsm t p a 0 200 400 600 10 100 1000 c t i r i f a v f v r v r v pf v ma a p (av) w z thjc v DSS17-06CR a s t vj =175c 150c 125c 100c 25c t vj = 175c 125c 25c t vj = 25c d=0.5 d = dc 0.5 0.33 0.25 0.17 0.08 50c dc 0.17 75c 150c 2 single pulse d = 0.5 0.33 0.25 0.08
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